To ensure a successful program for all locations, BCICTS will take place during the following timeframes:
| New York | Los Angeles | London | Tokyo | |
| Session 1 | 9 AM – 11 AM | 6 AM – 8 AM | 2 PM – 4 PM | 11 PM – 1 AM (next day) |
| Session 2 | 5 PM – 7 PM | 2 PM – 4 PM | 10 PM – 12 PM | 7 AM – 9 AM (next day) |
*Please note: Day change for those calling in from Tokyo.
The technical committee for BCICTS has lined up an exciting and informative array of speakers for the 2020 conference, below are speaker highlights for your reference:
The IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) technical sub-committees are organized to reflect the rapidly evolving developments in bipolar, BiCMOS and compound semiconductor circuits and devices. Submissions are encouraged in all areas of advanced circuits, devices and modeling, with particular emphasis on:
• Bipolar/BiCMOS devices, circuits and technologies
• 5G ICs, GaN HPAs/LNAs, InP THz PAs
• High Performance RF Switch Technologies
• GaN HEMT and other wide bandgap power devices
• Analog, RF & Microwave ICs
• mmW & THz ICs
• Process & Device Technology
• Modeling/Simulation
• Optical CMOS/SiGe Transceivers
• High Speed Digital, Mixed Signal, and Electro-Optic IC’s
2023 Invited Papers
| Author | Affiliation | INVITED PAPER TOPIC |
|---|---|---|
| Hanh-Phuc Le | University of California San Diego | Vertical Power Delivery and Heterogeneous Integration for High-Performance Computing |
| Dan Denninghoff | HRL Laboratories | Adaptable 40nm GaN T-gate MMIC process for mmW Applications |
| Venkata Vanukuru | Global Foundries | Analog/mmWave Circuit Demonstrations in state-of-the-art SiGe BiCMOS process for 5G and Optical Transceivers |
| Srabanti Chowdhury | Stanford University | On extracting the maximum power density at high frequencies from Gallium Nitride and related materials |
| Ali Niknejad | University of California at Berkeley | 100-200 GHz Wideband Transceivers: Can CMOS Compete? |
| Ted Letavic | Global Foundries | Silicon Photonics |
| Mike Peters | Applied Materials | Semiconductor Process Tooling for RF Technologies |
| Tom Kazior | DARPA | ELGAR or other mm-wave programs at Darpa |
| Joseph Casamento | MIT | ScAlN: Material and Device Aspects |
| Umesh Mishra | University of California Santa Barbara | N-polar GaN Devices |
| Simon Mahon | Macquarie University | Transient Field-Plate Thermometry in Stacked FET Power Amplifiers |
| Axel Tessmann | Fraunhofer | 50nm mHEMT developments and results |
| Hans Rohdin | Broadcom | Device Modeling for PA Module Design (from device physics to product) |
| Marvin Marbell | Wolfspeed | SiC IPD modeling from Doherty Design perspective |
| Guy Torfs | Gent University | High Speed SiGe BiCMOS Circuits for Optical Communications |
| John Cressler | Georgia Institute of Technology | SiGe HBTs for Cryogenic applications – physics, modeling and applications |
| Thomas Zimmer | University of Bordeaux | Review of methods for thermal resistance determination and extraction |
| Dr. Meidhi Saligane | University of Michigan | MPW and Open Access PDK |
| Sorin Voinigescu | University of Toronto | A Circuit Designer’s Perspective on Transistor Modelling Challenges for 6G, Fiberoptics and Quantum Computing Ics |
